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1

Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays--Part I: Polysilicon-Induced Variability

Resnati, Davide, Mannara, Aurelio, Nicosia, Gianluca, Paolucci, Giovanni M., Tessariol, Paolo, Spinelli, Alessandro S., Lacaita, Andrea L., Monzio Compagnoni, Christian

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.89 MB

english, 2018

2

Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part II: Random Telegraph Noise

Nicosia, Gianluca, Mannara, Aurelio, Resnati, Davide, Paolucci, Giovanni M., Tessariol, Paolo, Spinelli, Alessandro S., Lacaita, Andrea L., Goda, Akira, Monzio Compagnoni, Christian

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.74 MB

english, 2018

3

Memristive and CMOS Devices for Neuromorphic Computing

Milo, Valerio, Malavena, Gerardo, Monzio Compagnoni, Christian, Ielmini, Daniele

Journal:

Year:

2020

Language:

english

File:

PDF, 6.53 MB

english, 2020

4

[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs

Spinelli, Alessandro S., Compagnoni, Christian Monzio, Lacaita, Andrea L.

Year:

2018

Language:

english

File:

PDF, 1.11 MB

english, 2018

5

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

Compagnoni, Christian Monzio, Chiavarone, Luca, Calabrese, Marcello, Gusmeroli, Riccardo, Ghidotti, Michele, Lacaita, Andrea L., Spinelli, Alessandro. S., Visconti, Angelo

Year:

2009

Language:

english

File:

PDF, 210 KB

english, 2009

6

Special Issue on Reliability

Mahapatra, Souvik, Chen, Kevin J., Kaczer, Ben, Pancheri, Lucio, Rosenbaum, Elyse, Mouli, Chandra, Wong, Hei, Kerber, Andreas, Monzio Compagnoni, Christian, Koval, Randy, Meneghesso, Gaudenzio, Sherid

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 4.36 MB

english, 2019

7

[IEEE 2013 International Conference on IC Design & Technology (ICICDT) - Pavia, Italy (2013.05.29-2013.05.31)] Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) - Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology

Calabrese, Marcello, Miccoli, Carmine, Compagnoni, Christian Monzio, Chiavarone, Luca, Beltrami, Silvia, Parisi, Andrea, Bartolone, Sebastiano, Lacaita, Andrea L., Spinelli, Alessandro S., Visconti, A

Year:

2013

Language:

english

File:

PDF, 1010 KB

english, 2013

8

Variability Effects in Nanowire and Macaroni MOSFETs--Part I: Random Dopant Fluctuations

Spinelli, Alessandro S., Compagnoni, Christian Monzio, Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2020

Language:

english

File:

PDF, 6.41 MB

english, 2020

9

Reliability Characterization Issues for Nanoscale Flash Memories: A Case Study on 45-nm NOR Devices

Miccoli, Carmine, Monzio Compagnoni, Christian, Chiavarone, Luca, Beltrami, Silvia, Lacaita, Andrea L., Spinelli, Alessandro S., Visconti, Angelo

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.39 MB

english, 2013

10

Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays

Resnati, Davide, Goda, Akira, Nicosia, Gianluca, Miccoli, Carmine, Spinelli, Alessandro S., Monzio Compagnoni, Christian

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 129 KB

english, 2017

11

Reliability of NAND Flash Arrays: A Review of What the 2-D-to-3-D Transition Meant

Compagnoni, Christian Monzio, Spinelli, Alessandro S.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 53 KB

2019

12

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories

Maconi, Alessandro, Monzio Compagnoni, Christian, Amoroso, Salvatore M., Mascellino, Evelyne, Ghidotti, Michele, Padovini, Giorgio, Spinelli, Alessandro S., Lacaita, Andrea L., Mauri, Aurelio, Ghidini

Year:

2010

Language:

english

File:

PDF, 358 KB

english, 2010

13

Reviewing the Evolution of the NAND Flash Technology

Monzio Compagnoni, Christian, Goda, Akira, Spinelli, Alessandro S., Feeley, Peter, Lacaita, Andrea L., Visconti, Angelo

Journal:

Proceedings of the IEEE

Year:

2017

Language:

english

File:

PDF, 1.31 MB

english, 2017

14

Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays

Nicosia, Gianluca, Goda, Akira, Spinelli, Alessandro S., Compagnoni, Christian Monzio

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 303 KB

english, 2018

15

Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors

Paolucci, Giovanni M., Compagnoni, Christian Monzio, Castellani, Niccolo, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 287 KB

english, 2013

16

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - A step ahead toward a new microscopic picture for charge trapping/detrapping in flash memories

Resnati, Davide, Compagnoni, Christian Monzio, Paolucci, Giovanni M., Miccoli, Carmine, Barber, John, Bertuccio, Massimo, Beltrami, Silvia, Lacaita, Andrea L., Spinelli, Alessandro S., Visconti, Angel

Year:

2016

Language:

english

File:

PDF, 443 KB

english, 2016

17

Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State

Amoroso, Salvatore M., Compagnoni, Christian Monzio, Ghetti, Andrea, Gerrer, Louis, Spinelli, Alessandro S., Lacaita, Andrea L., Asenov, Asen

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 329 KB

english, 2013

18

Statistical constraints in nanocrystal memory scaling

Riccardo Gusmeroli, Christian Monzio Compagnoni, Alessandro S. Spinelli

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 276 KB

english, 2007

19

Impact of Control-Gate and Floating-Gate Design on the Electron-Injection Spread of Decananometer nand Flash Memories

Monzio Compagnoni, Christian, Miccoli, Carmine, Lacaita, Andrea L., Marmiroli, Andrea, Spinelli, Alessandro S., Visconti, Angelo

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 151 KB

english, 2010

20

Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part I: \(V_{T}\) Instabilities

Paolucci, Giovanni M., Compagnoni, Christian Monzio, Miccoli, Carmine, Spinelli, Alessandro S., Lacaita, Andrea L., Visconti, Angelo

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.08 MB

english, 2014

21

Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

Resnati, Davide, Monzio Compagnoni, Christian, Paolucci, Giovanni M., Miccoli, Carmine, Spinelli, Alessandro S., Lacaita, Andrea L., Visconti, Angelo, Goda, Akira

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 629 KB

english, 2015

22

Editorial Special Issue on âMemory Devices and Technologies for the Next Decadeâ

Compagnoni, Christian Monzio, Kang, Jinfeng, Shih, Yen-Hao, Du, Pei-Ying Penny, Kim, Tae-Hun, Mouli, Chandra, Yang, Joshua, Roy, Kaushik

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 2.88 MB

2020

23

Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays

Malavena, Gerardo, Lacaita, Andrea L., Spinelli, Alessandro S., Monzio Compagnoni, Christian

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.85 MB

english, 2018

24

Characterization of transient currents in HfO2 capacitors in the short timescale

Christian Monzio Compagnoni, Alessandro S. Spinelli, Andrea Bianchini, Andrea L. Lacaita, Sabina Spiga, Marco Fanciulli

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 120 KB

english, 2006

25

Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions

Franchini, Giulio, Spinelli, Alessandro S., Nicosia, Gianluca, Fumagalli, Ivan, Asa, Marco, Groppi, Chiara, Rinaldi, Christian, Lacaita, Andrea L., Bertacco, Riccardo, Compagnoni, Christian Monzio

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.26 MB

2020

26

Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

Adamu-Lema, Fikru, Monzio Compagnoni, Christian, Amoroso, Salvatore M., Castellani, Niccolò, Gerrer, Louis, Markov, Stanislav, Spinelli, Alessandro S., Lacaita, Andrea L., Asenov, Asen

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

27

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories

Paolucci, Giovanni M., Monzio Compagnoni, Christian, Miccoli, Carmine, Bertuccio, Massimo, Beltrami, Silvia, Barber, John, Kessenich, Jeffrey, Lacaita, Andrea L., Spinelli, Alessandro S., Visconti, An

Year:

2014

Language:

english

File:

PDF, 1.54 MB

english, 2014

28

Investigation of the Meyer-Neldel Rule in Si MOSFETs

Franchini, Giulio, Malavena, Gerardo, Compagnoni, Christian Monzio, Spinelli, Alessandro S.

Journal:

IEEE Electron Device Letters

Year:

2020

File:

PDF, 598 KB

2020

29

Study of nanocrystal memory reliability by CAST structures

Christian Monzio Compagnoni, Daniele Ielmini, Alessandro S Spinelli, Andrea L Lacaita, Cosimo Gerardi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 593 KB

english, 2004

30

Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method

Torrente, Giulio, Castellani, Niccolò, Ghetti, Andrea, Monzio Compagnoni, Christian, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

Journal:

Journal of Computational Electronics

Year:

2013

Language:

english

File:

PDF, 1.83 MB

english, 2013

31

[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories

Miccoli, Carmine, Monzio Compagnoni, Christian, Spinelli, Alessandro S., Lacaita, Andrea L.

Year:

2011

Language:

english

File:

PDF, 167 KB

english, 2011

32

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Reliability investigation of T-RAM cells for DRAM applications

Mulaosmanovic, Halid, Paolucci, Giovanni M., Monzio Compagnoni, Christian, Castellani, Niccolo, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Vigano, Sara, Conti, Anna M., Righetti, Nicco

Year:

2014

Language:

english

File:

PDF, 186 KB

english, 2014

33

First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

Monzio Compagnoni, Christian, Paolucci, Giovanni M., Miccoli, Carmine, Spinelli, Alessandro S., Lacaita, Andrea L., Visconti, Angelo, Goda, Akira

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 438 KB

english, 2015

34

Impact of Neutral Threshold-Voltage Spread and Electron-Emission Statistics on Data Retention of Nanoscale nand Flash

Miccoli, Carmine, Monzio Compagnoni, Christian, Amoroso, Salvatore Maria, Spessot, Alessio, Fantini, Paolo, Visconti, Angelo, Spinelli, Alessandro S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 123 KB

english, 2010

35

Flash Memories

Spessot, Alessio, Compagnoni, Christian Monzio, Farina, Fabrizio, Calderoni, Alessandro, Spinelli, Alessandro S, Fantini, Paolo

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 110 KB

english, 2010

36

Comments on “A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs”

Paolucci, Giovanni M., Spinelli, Alessandro S., Monzio Compagnoni, Christian, Tessariol, Paolo

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 161 KB

english, 2017

37

Investigation of the Turn-ON of T-RAM Cells Under Transient Conditions

Mulaosmanovic, Halid, Compagnoni, Christian Monzio, Castellani, Niccolo, Paolucci, Giovanni M., Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S.,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.93 MB

english, 2015

38

New Erase Constraint for the Junction-Less Charge-Trap Memory Array in Cylindrical Geometry

Maconi, Alessandro, Compagnoni, Christian Monzio, Spinelli, Alessandro S., Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.18 MB

english, 2013

39

Comprehensive numerical simulation of threshold-voltage transients in nitride memories

Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 716 KB

english, 2011

40

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays

Compagnoni, Christian Monzio, Miccoli, Carmine, Mottadelli, Riccardo, Beltrami, Silvia, Ghidotti, Michele, Lacaita, Andrea L., Spinelli, Alessandro S., Visconti, Angelo

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

41

Fitting Cells Into a Narrow $V_{T}$ Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

Paolucci, Giovanni Maria, Compagnoni, Christian Monzio, Spinelli, Alessandro S., Lacaita, Andrea L., Goda, Akira

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.70 MB

english, 2015

42

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices

Torrente, Giulio, Castellani, Niccolo, Ghetti, Andrea, Compagnoni, Christian Monzio, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

43

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Assessment of distributed-cycling schemes on 45nm NOR flash memory arrays

Miccoli, Carmine, Monzio Compagnoni, Christian, Chiavarone, Luca, Beltrami, Silvia, Lacaita, Andrea L., Spinelli, Alessandro S., Visconti, Angelo

Year:

2012

Language:

english

File:

PDF, 447 KB

english, 2012

44

A comparison of modeling approaches for current transport in polysilicon-channel nanowire and macaroni GAA MOSFETs

Mannara, Aurelio, Malavena, Gerardo, Sottocornola Spinelli, Alessandro, Monzio Compagnoni, Christian

Journal:

Journal of Computational Electronics

Year:

2020

File:

PDF, 1.89 MB

2020

45

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic Implications

Monzio Compagnoni, Christian, Castellani, Niccolò, Mauri, Aurelio, Spinelli, Alessandro S., Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 889 KB

english, 2012

46

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays

Miccoli, Carmine, Paolucci, Giovanni M., Compagnoni, Christian Monzio, Spinelli, Alessandro S., Goda, Akira

Year:

2015

Language:

english

File:

PDF, 484 KB

english, 2015

47

Special Issue on Reliability

Mahapatra, Souvik, Chen, Kevin J., Kaczer, Ben, Pancheri, Lucio, Rosenbaum, Elyse, Mouli, Chandra, Wong, Hei, Kerber, Andreas, Monzio Compagnoni, Christian, Koval, Randy, Meneghesso, Gaudenzio, Sherid

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 4.36 MB

2019

48

Modeling of Dynamic Operation of T-RAM Cells

Resnati, Davide, Monzio Compagnoni, Christian, Mulaosmanovic, Halid, Castellani, Niccolo, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benven

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.84 MB

english, 2015

49

A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories

Paolucci, Giovanni M., Spinelli, Alessandro S., Monzio Compagnoni, Christian, Tessariol, Paolo

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.50 MB

english, 2016

50

Working Principles of a DRAM Cell Based on Gated-Thyristor Bistability

Mulaosmanovic, Halid, Paolucci, Giovanni M., Compagnoni, Christian Monzio, Castellani, Niccol, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., B

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 673 KB

english, 2014

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